Study of gain characteristics of GaAs/GaAlAs self assembled quantum dots

Abstract

The effect of size and shape anisotropy on the gain characteristics of strain free GaAs/AlGaAs quantum dots is theoretically investigated. QD is modelled by anisotropic parabolic potential along x-y plane. Luttinger Hamiltonian has been numerically diagonalized over a wider range of shape anisotropy and size to obtain the eigenvalues and eigenvectors. The dipole matrix elements are obtained for interband transitions and gain spectra are calculated.