{"title":"Surface transfer doping in silicon waveguides: A cause of optical loss","authors":"L. Alloatti, C. Koos, J. Leuthold","doi":"10.1109/GROUP4.2015.7305940","DOIUrl":null,"url":null,"abstract":"We show that undoped silicon waveguides may suffer of up to 1.8dB/cm free-carrier absorption caused by improper surface passivation, this result opens new perspectives for low-loss silicon photonics and high-speed gateless devices.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305940","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We show that undoped silicon waveguides may suffer of up to 1.8dB/cm free-carrier absorption caused by improper surface passivation, this result opens new perspectives for low-loss silicon photonics and high-speed gateless devices.