{"title":"The Development and Application of Semiconductor Materials","authors":"Junfeng Wu","doi":"10.1109/ifeea51475.2020.00039","DOIUrl":null,"url":null,"abstract":"As the development of nowadays technology, semiconductor material has been taking an indispensable part in various aspects of our life. This paper is intended to talk about the development and application of semiconductor material of three generations, which includes the first-generation semiconductor Si applied in PN junction, the second-generation GaAs in MESFET and modulation doping, and the third-generation GaN applied in advanced charger. The third-generation semiconductor material GaN has an advantage over Si in terms of its physical properties, direct bandgap and wide bandgap characteristics. But GaN still has several limitations nowadays on stability, cost and manufacture. The development of the newly-formed generation of semiconductor remains to be seen.","PeriodicalId":285980,"journal":{"name":"2020 7th International Forum on Electrical Engineering and Automation (IFEEA)","volume":"227 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 7th International Forum on Electrical Engineering and Automation (IFEEA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ifeea51475.2020.00039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
As the development of nowadays technology, semiconductor material has been taking an indispensable part in various aspects of our life. This paper is intended to talk about the development and application of semiconductor material of three generations, which includes the first-generation semiconductor Si applied in PN junction, the second-generation GaAs in MESFET and modulation doping, and the third-generation GaN applied in advanced charger. The third-generation semiconductor material GaN has an advantage over Si in terms of its physical properties, direct bandgap and wide bandgap characteristics. But GaN still has several limitations nowadays on stability, cost and manufacture. The development of the newly-formed generation of semiconductor remains to be seen.