The Development and Application of Semiconductor Materials

Junfeng Wu
{"title":"The Development and Application of Semiconductor Materials","authors":"Junfeng Wu","doi":"10.1109/ifeea51475.2020.00039","DOIUrl":null,"url":null,"abstract":"As the development of nowadays technology, semiconductor material has been taking an indispensable part in various aspects of our life. This paper is intended to talk about the development and application of semiconductor material of three generations, which includes the first-generation semiconductor Si applied in PN junction, the second-generation GaAs in MESFET and modulation doping, and the third-generation GaN applied in advanced charger. The third-generation semiconductor material GaN has an advantage over Si in terms of its physical properties, direct bandgap and wide bandgap characteristics. But GaN still has several limitations nowadays on stability, cost and manufacture. The development of the newly-formed generation of semiconductor remains to be seen.","PeriodicalId":285980,"journal":{"name":"2020 7th International Forum on Electrical Engineering and Automation (IFEEA)","volume":"227 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 7th International Forum on Electrical Engineering and Automation (IFEEA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ifeea51475.2020.00039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

As the development of nowadays technology, semiconductor material has been taking an indispensable part in various aspects of our life. This paper is intended to talk about the development and application of semiconductor material of three generations, which includes the first-generation semiconductor Si applied in PN junction, the second-generation GaAs in MESFET and modulation doping, and the third-generation GaN applied in advanced charger. The third-generation semiconductor material GaN has an advantage over Si in terms of its physical properties, direct bandgap and wide bandgap characteristics. But GaN still has several limitations nowadays on stability, cost and manufacture. The development of the newly-formed generation of semiconductor remains to be seen.
半导体材料的发展与应用
随着当今科技的发展,半导体材料已经在我们生活的各个方面发挥着不可缺少的作用。本文将介绍三代半导体材料的发展和应用,包括第一代半导体材料Si在PN结中的应用,第二代半导体材料GaAs在MESFET和调制掺杂中的应用,以及第三代半导体材料GaN在先进充电器中的应用。第三代半导体材料GaN在物理性质、直接带隙和宽带隙等方面都优于Si。但目前氮化镓在稳定性、成本和制造等方面还存在一定的局限性。新一代半导体的发展还有待观察。
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