TWO-PHOTON FLUORESCENCE EXCITATION CROSS-SECTIONS OF PHOTOSENSITIZER THIOXANTHONETO FABRICATE CELL SCAFFOLD FOR BIOMEDICAL APPLICATIONS

Bibi Safia Haq, H. U. Khan, A. Shakoor, S. Attaullah, K. Shaheen, K. Alam
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Abstract

This study investigates the fluorescence emission profile of Thioxanthone in ethanol due to two photon absorption excitation. Thioxanthone was investigated as photosensitizer to fabricate cell scaffold in Ethoxylated Bis Phenol A Dimethacrylate for tissue repair in the field of biomedical. Also incident laser power effects were analyzed and it was found that the fluorescence intensity increases with increasing incident laser power, I o ,and the emitted fluorescence obeys the square-law dependences. Also when the photosensitizer was excited at different wavelengths (800nm, 400nm), it was found that fluorescence emission profile does not change but variations occur only in fluorescence emission intensity This study investigates the fluorescence emission profile of Thioxanthone in Ethanol due to two photon absorption excitation.  Thioxanthone  was  investigated  as  Photosensitizer  to  fabricate  cell  scaffold  in  Ethoxylated  Bis  Phenol A Dimethacrylate  for  tissue  repair  in  the  field  of  biomedical.  Also  Incident  Laser  Power  Effects  were  analyzed  and found that the Fluorescence Intensity increases with increasing Incident Laser Power, Io, and the emitted fluorescence obeys  the  square-law  dependences.  Also  when  the  Photo-Sensitizer  was  excited  at  different  wavelengths  (800nm, 400nm), it was found that Fluorescence Emission Profile did not change but variations occurred only in Fluorescence Emission Intensity.
双光子荧光激发光敏剂硫氧蒽酮制备生物医学用细胞支架的截面
研究了硫氧蒽酮在乙醇中的双光子吸收激发下的荧光发射谱图。研究了噻唑蒽酮作为光敏剂制备聚乙氧基双酚A二甲基丙烯酸酯细胞支架用于生物医学领域的组织修复。分析了入射激光功率效应,发现荧光强度随入射激光功率的增大而增大,且发射的荧光服从平方律关系。在不同波长(800nm, 400nm)下激发光敏剂时,发现其荧光发射谱图没有变化,只发生荧光发射强度的变化。本研究考察了乙醇中硫氧蒽酮在双光子吸收激发下的荧光发射谱图。研究了噻唑蒽酮作为光敏剂制备聚乙氧基双酚A二甲基丙烯酸酯细胞支架用于生物医学领域的组织修复。分析了入射激光功率效应,发现荧光强度随入射激光功率的增大而增大,发射的荧光服从平方律关系。在不同波长(800nm、400nm)激发光敏剂时,荧光发射谱没有变化,只发生了荧光发射强度的变化。
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