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Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology

2007 Conference on Lasers and Electro-Optics - Pacific Rim Pub Date : 2007-12-04 DOI:10.1016/J.JCRYSGRO.2007.12.013
S. Ling, Te-Chung Wang, T. Ko, T. Lu, H. Kuo, Shing-chung Wang
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引用次数: 7
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采用沟槽外延横向过生长技术的紫外非极性InGaN/GaN发光二极管的特性
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2007 Conference on Lasers and Electro-Optics - Pacific Rim
2007 Conference on Lasers and Electro-Optics - Pacific Rim
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