A 300 MIPS/W RISC core processor with variable supply-voltage scheme in variable threshold-voltage CMOS

K. Suzuki, S. Mita, T. Fujita, F. Yamane, F. Sano, A. Chiba, Y. Watanabe, K. Matsuda, T. Maeda, T. Kuroda
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引用次数: 63

Abstract

A 300 MIPS/W RISC core processor with variable supply-voltage (VS) scheme in variable threshold-voltage CMOS (VTCMOS) is presented. Performance in MIPS/W can be improved by a factor of more than two with no modification in the RISC core except for substrate contacts for the VTCMOS. From a 3.3 V external power supply the VS scheme automatically generates minimum internal supply voltages which meet the demand on its operation frequency.
在可变阈值电压CMOS中采用可变电源电压方案的300 MIPS/W RISC核心处理器
提出了一种基于可变阈值电压CMOS (VTCMOS)的300 MIPS/W可变电源电压方案的RISC核心处理器。MIPS/W的性能可以提高两倍以上,除了VTCMOS的衬底触点外,RISC内核没有任何修改。从3.3 V的外部电源,VS方案自动产生最小的内部电源电压,满足其工作频率的需求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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