Optimum sampling for track PEB CD Integrated Metrology

Argon Chen, Sean Hsueh, J. Blue
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引用次数: 2

Abstract

In semiconductor manufacturing, metrology of critical dimension (CD) is to ensure the quality of complicated processing steps and thus the quality of the fabricated chips by discovering faults or improvement opportunities. CD metrology has been considered the integrated part of the IC design and fabrication processes. Integrated Metrology (IM) is an enabler to achieve wafer-level control for technology nodes below 45nm because of its capability of using the tool queue time to collect CD measurements and to avoid sampling lag to the control algorithms. How to maneuver the CD IM capability becomes a great challenge to the litho/etch processes. Focus of this research will be on the CD IM for the Coater/Developer Track systems. We develop an IM sampling strategy with an optimum sampling plan to maximize the wafer-level control effectiveness subjected to the throughput, APC and SPC constraints. The optimum sampling problem is formulated and solved as an Integer Programming problem. Actual CD data are used to demonstrate and verify the proposed sampling methods.
轨道PEB CD综合计量的最佳采样
在半导体制造中,关键尺寸计量是通过发现缺陷或改进机会来保证复杂加工步骤的质量,从而保证所制芯片的质量。CD测量一直被认为是集成电路设计和制造过程中不可或缺的一部分。集成计量技术(IM)是实现45纳米以下技术节点的晶圆级控制的一个推动因素,因为它能够使用工具队列时间来收集CD测量数据,并避免采样滞后于控制算法。如何操纵CD - IM能力成为光刻/蚀刻工艺的一大挑战。本研究的重点将放在涂布员/开发人员跟踪系统的CD IM上。我们开发了一种具有最佳采样计划的IM采样策略,以最大限度地提高受吞吐量,APC和SPC约束的晶圆级控制效率。将最优抽样问题表述为整数规划问题。实际的CD数据被用来演示和验证所提出的采样方法。
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