A bi-stable silicon nanofin nanoelectromechanical switch based on van der Waals force for non-volatile memory applications

B. Soon, N. Singh, J. Tsai, Chengkuo Lee
{"title":"A bi-stable silicon nanofin nanoelectromechanical switch based on van der Waals force for non-volatile memory applications","authors":"B. Soon, N. Singh, J. Tsai, Chengkuo Lee","doi":"10.1109/NEMS.2013.6559793","DOIUrl":null,"url":null,"abstract":"We present a silicon nanofin (Si-NF) which can be actuated bi-directionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force that holds the Si-NF to either terminal without on-hold bias, thus showing a bi-stable hysteresis behavior. The measured pull-in voltage VPI and VRESET is 10V and -12V respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, therefore it can be an ideal device for non-volatile memory (NVM) application.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"226 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2013.6559793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We present a silicon nanofin (Si-NF) which can be actuated bi-directionally by electrostatic force between two contact surfaces. The switch is able to maintain its contact leveraging on van der Waals force that holds the Si-NF to either terminal without on-hold bias, thus showing a bi-stable hysteresis behavior. The measured pull-in voltage VPI and VRESET is 10V and -12V respectively, confirming that the switch can be reset by the opposite electrode. Since the switch toggles between two stable states, therefore it can be an ideal device for non-volatile memory (NVM) application.
一种基于范德华力的非易失性存储器双稳态硅纳米纳米机电开关
我们提出了一种硅纳米鳍(Si-NF),它可以通过两个接触面之间的静电力双向驱动。开关能够利用范德华力保持其接触,使Si-NF保持在任何一端而没有保持偏差,从而显示出双稳定的滞后行为。测量的拉入电压VPI和VRESET分别为10V和-12V,确认开关可以通过对电极复位。由于开关在两种稳定状态之间切换,因此它可以成为非易失性内存(NVM)应用程序的理想设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信