Photodiode compression due to current-dependent capacitance

International Topical Meeting on Microwave Photonics MWP 2000 (Cat. No.00EX430) Pub Date : 2000-09-11 DOI:10.1109/MWP.2000.889828

K. Williams, P. Goetz

引用次数: 7

Abstract

We present photodetector compression measurements and simulations to demonstrate the consequences of absorption in undepleted regions of p-i-n photodiodes. Specifically, this absorption can cause compression when operated above a few milliamps due to a current-dependent capacitance.

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光电二极管由于电流依赖电容而产生的压缩

我们提出光电探测器压缩测量和模拟，以证明在p-i-n光电二极管的未耗尽区域吸收的后果。具体来说，由于电流相关电容，当工作在几毫安以上时，这种吸收会导致压缩。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Topical Meeting on Microwave Photonics MWP 2000 (Cat. No.00EX430)

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