Harmonic Modelocking at up to 440 GHz Repetition Rates in InGaAs-InAIGaAs Quantum Well Lasers

S. McDougall, C. Ironside, A. C. Bryce, J. Marsh, B. Vogele, C. Stanley
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引用次数: 1

Abstract

The InGaAs-InAlGaAs quaternary quantum well material system forms an alternative to the conventional InGaAsP based diode lasers for use in 1.3µm and 1.55µm fibre optic systems. Larger conduction band offsets and a greater thermal stability compared to the InGaAsP system makes InAlGaAs material attractive for both high speed modulators [1] and room temperature high power lasers. In this paper we present the first demonstration to our knowledge of monolithic modelocking action from InGaAs-InAlGaAs laser diodes.
InGaAs-InAIGaAs量子阱激光器高达440 GHz重复频率的谐波模型锁定
InGaAs-InAlGaAs四元量子阱材料系统是传统InGaAsP基二极管激光器的替代品,可用于1.3µm和1.55µm光纤系统。与InGaAsP系统相比,更大的导带偏移和更高的热稳定性使InAlGaAs材料在高速调制器[1]和室温高功率激光器中都具有吸引力。在本文中,我们首次展示了我们对InGaAs-InAlGaAs激光二极管的单片模型锁定作用的了解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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