Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs

Abstract

This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility