Advanced building blocks for (Sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology

Abstract

Millimeter- and submillimeter-wave integrated circuits (MMICs and S-MMICs) and modules developed at the Fraunhofer IAF for manifold applications in the frequency range up to 700 GHz are presented. These circuits use the advanced metamorphic high electron mobility transistor (mHEMT) technology based on the InAlAs/InGaAs material system on 4" GaAs substrates. The presented circuits are key components in wireless communication systems, sensor systems, as well as radio astronomic receivers.