The NCAP Nonlinear T Model for Bipolar Junction Transistors at UHF Frequencies

C. Paludi, J. Whalen
{"title":"The NCAP Nonlinear T Model for Bipolar Junction Transistors at UHF Frequencies","authors":"C. Paludi, J. Whalen","doi":"10.1109/ISEMC.1979.7568798","DOIUrl":null,"url":null,"abstract":"The Nonlinear Circuit Analysis Program (NCAP) has been used to calculate nonlinear transfer functions which subsequently predict Electromagnetic Interference (EMI) effects in electronic circuits containing discrete semiconductor devices for RF frequencies up to 100 MHz. However, NCAP has not previously been tested nor documented in the UHF frequency range (300 to 3000 MHz). The purpose of this paper is to present the first predicted results of EMI effects in discrete bipolar junction transistors, using NCAP's nonlinear transfer functions, in the UHF range. The predicted results will be compared to experimental results.","PeriodicalId":283257,"journal":{"name":"1979 IEEE International Symposium on Electromagnetic Compatibility","volume":"464 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 IEEE International Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.1979.7568798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The Nonlinear Circuit Analysis Program (NCAP) has been used to calculate nonlinear transfer functions which subsequently predict Electromagnetic Interference (EMI) effects in electronic circuits containing discrete semiconductor devices for RF frequencies up to 100 MHz. However, NCAP has not previously been tested nor documented in the UHF frequency range (300 to 3000 MHz). The purpose of this paper is to present the first predicted results of EMI effects in discrete bipolar junction transistors, using NCAP's nonlinear transfer functions, in the UHF range. The predicted results will be compared to experimental results.
超高频双极结晶体管的NCAP非线性T模型
非线性电路分析程序(NCAP)已被用于计算非线性传递函数,该传递函数随后预测包含射频频率高达100 MHz的分立半导体器件的电子电路中的电磁干扰(EMI)效应。然而,NCAP之前没有在UHF频率范围(300至3000 MHz)进行测试或记录。本文的目的是利用NCAP的非线性传递函数,在UHF范围内提出离散双极结晶体管中电磁干扰效应的第一个预测结果。将预测结果与实验结果进行比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信