Development of back-to-back connected edge diodes for THz multipliers

Abstract

A technology for fabrication of back-to-back connected diodes with edge (nonplanar) Schottky contacts to epitaxial layer (or heterolayers) on semi-insulating GaAs substrate has been developed. A concept of THz frequency multipliers on their basis has been formulated. The results of the structure design, test measurements and experiments are presented.