A novel RFIC for UHF oscillators

Abstract

In the past, several successful attempts were made in designing low phase noise oscillators, including noise canceling techniques. Since silicon and silicon germanium transistors with high gain are not available in PNP polarity, it has been difficult to find appropriate biasing schemes. This paper shows a novel circuit using NPN transistors, which meets all the required goals and has been validated in discrete form and is currently in production at the Motorola silicon germanium foundry.