Power Cycling Body Diode Current Flow on SiC MOSFET Device

Abstract

The aim of this paper is to analyze the planar SiC MOSFETs behavior under power cycle current flow on body diode. In particular, the activity highlights how this type of trials, in addition to stimulate failure mechanisms directly related to metal fatigue, is able to stimulate failure mechanisms that seem not directly related to metal fatigue. The activity was developed by supporting the analysis of data obtained through laboratory measurements from a careful study of Failure Analysis (FA).