High-Precision Bandgap Voltage Generation Method With Chopper Stabilization Technique

Li Chuang-ze, Han Ben-guang, Guo Zhong-jie, Wu Long-sheng
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引用次数: 1

Abstract

A Three-level chopping technique to reduce offset caused by mismatch of the Wilson Current-mirror and PNP bipolar transistor is descried and presented. Input referred offset voltage of the PNP transistor is reduced on first level. On second level, Wilson Current-mirror offset is further reduced along with the low frequency 1/f noise caused by the self-biased circuit. The last level is used to reduce offset of self-biased circuit two. The proposed BGR was simulated in a temperature range from -45°C and 125°C. Simulate results showed that the standard deviation of the BGR output voltage without chopping is 9 times higher than that of when chopping is enabled. The proposed three-level chopping technique is verified improving performance characteristics of conventional BGR circuit. The maximum supply current is 36uA and the area of layout is 0. 085mm2 with a standard 0. 13um 1P4M CMOS process.
基于斩波稳定技术的高精度带隙电压产生方法
提出了一种三电平斩波技术,用于减小Wilson电流镜与PNP双极晶体管失配引起的偏置。PNP晶体管的输入参考偏置电压在第一级降低。在第二级,威尔逊电流镜偏移量随着自偏置电路引起的低频1/f噪声进一步减小。最后一个电平用于减小自偏置电路2的偏置。所提出的BGR在-45°C和125°C的温度范围内进行了模拟。仿真结果表明,无斩波时BGR输出电压的标准差比使能斩波时高9倍。验证了三电平斩波技术改善了传统BGR电路的性能特性。最大供电电流36uA,布局面积为0。085mm2带标准的0。13um 1P4M CMOS工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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