Li Chuang-ze, Han Ben-guang, Guo Zhong-jie, Wu Long-sheng
{"title":"High-Precision Bandgap Voltage Generation Method With Chopper Stabilization Technique","authors":"Li Chuang-ze, Han Ben-guang, Guo Zhong-jie, Wu Long-sheng","doi":"10.1109/EDSSC.2019.8754018","DOIUrl":null,"url":null,"abstract":"A Three-level chopping technique to reduce offset caused by mismatch of the Wilson Current-mirror and PNP bipolar transistor is descried and presented. Input referred offset voltage of the PNP transistor is reduced on first level. On second level, Wilson Current-mirror offset is further reduced along with the low frequency 1/f noise caused by the self-biased circuit. The last level is used to reduce offset of self-biased circuit two. The proposed BGR was simulated in a temperature range from -45°C and 125°C. Simulate results showed that the standard deviation of the BGR output voltage without chopping is 9 times higher than that of when chopping is enabled. The proposed three-level chopping technique is verified improving performance characteristics of conventional BGR circuit. The maximum supply current is 36uA and the area of layout is 0. 085mm2 with a standard 0. 13um 1P4M CMOS process.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2019.8754018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A Three-level chopping technique to reduce offset caused by mismatch of the Wilson Current-mirror and PNP bipolar transistor is descried and presented. Input referred offset voltage of the PNP transistor is reduced on first level. On second level, Wilson Current-mirror offset is further reduced along with the low frequency 1/f noise caused by the self-biased circuit. The last level is used to reduce offset of self-biased circuit two. The proposed BGR was simulated in a temperature range from -45°C and 125°C. Simulate results showed that the standard deviation of the BGR output voltage without chopping is 9 times higher than that of when chopping is enabled. The proposed three-level chopping technique is verified improving performance characteristics of conventional BGR circuit. The maximum supply current is 36uA and the area of layout is 0. 085mm2 with a standard 0. 13um 1P4M CMOS process.