Auger transitions and their signatures in III-nitride LEDs: A full-band modeling

Abstract

Auger recombination and the relaxation of the resulting excited electrons are investigated in III-nitride light-emitting diodes (LEDs) with a full-band Monte Carlo carrier transport model to assess the possibility of recovering Auger signatures from experiments. Full-Brillouin-zone calculations of Auger coefficients indicate that Auger recombination may not be negligible for LED operation, although the identification of Auger signatures from complex experiments should be supported by theoretical calculations before any claim concerning the origin of the efficiency droop can be made.