Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors

Abstract

This work presented an experimental analysis of the LFN in p and n-type JNTs of different L and doping concentrations. JNTs have shown 1/f noise as the main noise component, which has been associated to CNF in nMOS and MF in the pMOS. Also, SId reduced with the rise of the doping concentration and with the raise of L.