Design of Miniaturized On-chip SIW Cavity Filter and Diplexer in 65nm CMOS Process

Amir Altaf, W. Abbas, M. Seo
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Abstract

A miniaturized on-chip substrate integrated waveguide (SIW) bandpass filter (BPF) and diplexer are designed in a 65nm CMOS process. The miniaturization of 42% is achieved by carving slots in the top layer of the SIW cavity. The designed two pole bandpass filter has a simulated 3 dB bandwidth of 11.1% around 70 GHz, while the diplexer has 3-dB bandwidths of 15.3% GHz and 14.86% around 71 and 90.9 GHz, respectively. Moreover, the isolation between two output ports of the diplexer is greater than -27.3 dB.
小型化片上SIW腔滤波器和65nm CMOS双工器的设计
采用65nm CMOS工艺设计了小型化片上衬底集成波导(SIW)、带通滤波器(BPF)和双工器。通过在SIW型腔的顶层雕刻槽实现了42%的微型化。所设计的两极带通滤波器在70 GHz附近的模拟3db带宽为11.1%,而双工器在71 GHz和90.9 GHz附近的模拟3db带宽分别为15.3% GHz和14.86%。双工器两个输出端口之间的隔离度大于-27.3 dB。
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