Impact of Ferroelectric Material Properties on Device Characteristics of Ferroelectric Ge0.97Sn0.03 Double Gate FET (FEGeSnDGFET)

Abstract

In this work, an investigation on device performance of Ferroelectric Ge0.97Sn0.03 Double Gate Field Effect Transistor (FEGeSnDGFET) has been presented. The Germanium–Tin (GeSn) alloy has been employed as channel material owing to its high mobility which results from the presence of strain. The main obstacle in using GeSn as channel material in devices is very large leakage current. Use of ferroelectric (FE) layer in FEGeSnDGFET leads to steeper characteristics as compared to conventional device resulting in reduced OFF-state current and subthreshold swing (SS). The impact of variation in FE material properties has also been studied on characteristics of FEGeSnDGFET and it has been demonstrated that FEGeSnDGFET exhibits sub-60 mV/dec SS operation for a wide range of FE material properties.