Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology

Abstract

In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.