A modern look at the CMOS stuck-open fault

Roberto Gómez, V. Champac, C. Hawkins, J. Segura
{"title":"A modern look at the CMOS stuck-open fault","authors":"Roberto Gómez, V. Champac, C. Hawkins, J. Segura","doi":"10.1109/LATW.2009.4813818","DOIUrl":null,"url":null,"abstract":"The stuck-open fault (SOF) is a difficult, hard failure mechanism unique to CMOS technology [1–3]. Its detection requires a specific 2-vector pair that examines each transistor in the logic gate for an open defect in its drain and/or source. This defect defies a guaranteed 100% detection. We will show that this mostly discarded failure mechanism is very relevant to modern ICs. Current leakage in nanoscale technologies influence significantly the behavior of this fault.","PeriodicalId":343240,"journal":{"name":"2009 10th Latin American Test Workshop","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 10th Latin American Test Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LATW.2009.4813818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

The stuck-open fault (SOF) is a difficult, hard failure mechanism unique to CMOS technology [1–3]. Its detection requires a specific 2-vector pair that examines each transistor in the logic gate for an open defect in its drain and/or source. This defect defies a guaranteed 100% detection. We will show that this mostly discarded failure mechanism is very relevant to modern ICs. Current leakage in nanoscale technologies influence significantly the behavior of this fault.
CMOS卡开故障的现代视角
卡开故障(SOF)是CMOS技术特有的一种困难的硬故障机制[1-3]。它的检测需要一个特定的2向量对来检查逻辑门中的每个晶体管在漏极和/或源极中是否存在开路缺陷。这个缺陷无法100%检测到。我们将证明这种大多被抛弃的失效机制与现代集成电路非常相关。纳米级技术中的电流泄漏对该故障的行为有显著影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信