The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs

Abstract

In this paper we discus results from `atomistic' and continuous simulation of decananometer scale bulk MOSFETs and FinFETs. We study the behaviour of important figures of merit including threshold voltage, off current and on current. We provide physical explanation for the origin of the discrepancies between the averaged values obtained from the statistical simulations and the results from the continuous doping simulation. Based on our analysis we clearly demonstrate that there are increasing errors in the doping distributions when device TCAD simulations are calibrated using continuous doping profiles. This questions the use of continuous doping profiles in the routine calibration and TCAD based optimisation of decananometer scale bulk MOSFETs and FinFET.