Dielectric induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells by two step rapid thermal annealing

Abstract

A new scheme for the dielectric-induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs was reported. The vacancy-generating chemical reaction of SiO/sub 2/ with an In/sub 0.53/Ga/sub 0.47/As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time.