Self-biasing MOS Reference Current Sources Insensitive to Supply Voltage and Temperature

Souma Yamamoto, T. Hosono, Takafumi Kamio, Shogo Katayama, Kuswan Isam Ebisawa, Tianrui Feng, A. Kuwana, Haruo Kobayashi
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Abstract

This paper describes three types of self-biasing MOS reference current sources insensitive to supply voltage and temperature. (i) The first one is a Gunma University (GU) reference current source, based on our previously proposed temperature-insensitive MOS reference current source. This time, a simple startup circuit is investigated. Since this circuit has two stable states, it is necessary to use a startup circuit to initially operate it in the correct stable state. We have improved the startup circuit with a simple technique, which can turn off after the normal operation starts. This startup circuit is also used for the other two self-biasing MOS current sources. The impact of NMOS threshold voltage variation on circuit performance is verified by simulation. (ii) The second one is a peaking current source (or a Nagata current source) with self-biasing configuration. Due to the self-biasing configuration, the supply voltage insensitivity range is widened. Also, simulations show that careful designing MOSFET size and resistor value can realize temperature insensitivity of the output current. (iii) The third one is a Widlar current source with self-biasing configuration, which improves the supply voltage insensitivity of the output current. We also detail some additional circuits that boost its temperature insensitivity.
对电源电压和温度不敏感的自偏置MOS参考电流源
本文介绍了三种对电源电压和温度不敏感的自偏置MOS基准电流源。(i)第一个是基于我们之前提出的温度不敏感MOS参考电流源的群马大学(GU)参考电流源。这一次,研究了一个简单的启动电路。由于该电路有两个稳定状态,因此有必要使用启动电路在正确的稳定状态下初始操作。我们用简单的技术改进了启动电路,使其在正常工作启动后即可关闭。该启动电路也用于另外两个自偏置MOS电流源。通过仿真验证了NMOS阈值电压变化对电路性能的影响。(ii)第二种是具有自偏置配置的峰值电流源(或永田电流源)。由于自偏置结构,电源电压不敏感范围扩大。仿真结果表明,精心设计MOSFET的尺寸和电阻值可以实现输出电流的温度不敏感。(iii)第三种是Widlar电流源,具有自偏置配置,改善了输出电流的电源电压不敏感。我们还详细介绍了一些提高其温度不敏感性的额外电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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