A Review on Comparative Analysis of Various Mosfets on The Basis of Electrical Parameters

Abstract

This paper is based on a comparative analysis of four types of MOSFETs on the basis of various electrical parameters of a MOSFET. A number of research papers have been reviewed to understand the trend that is followed by the various MOSFETs like Single Gate Junction-less MOSFET, Double Gate Junction-less MOSFET, Gate All Around MOSFET and FINFET with respect to electrical parameters. Based on this study we have analyzed the electrical parameters like drain current, gate voltage, transconductance, Ion /Ioff ratio, output conductance and channel length. Each parameter is observed and graphs for each kind of MOSFET for these parameters have been mapped in this paper. We have then compared the four MOSFETs on the basis of these parameters to analyze the most efficient MOSFET. We have simulated these parameters on SILVACO. As a result of which we were able to find that Gate All Around Junction-less MOSFET provides better overall frequency analysis as compared to other MOSFETs.