A 40nm Analog-Input ADC-Free Compute-in-Memory RRAM Macro with Pulse-Width Modulation between Sub-arrays

Hongwu Jiang, Wantong Li, Shanshi Huang, Shimeng Yu
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引用次数: 16

Abstract

This paper presents an ADC-free compute-in-memory (CIM) RRAM-based macro, exploiting the fully analog intra-/inter-array computation. The main contributions include: 1) a lightweight input-encoding scheme based on pulse-width modulation (PWM), which improves the compute throughput by ~7 times; 2) a fully analog data processing manner between sub-arrays without explicit ADCs, which does not introduce quantization loss and saves the power by a factor of 11.6. The 40nm prototype chip with TSMC RRAM achieves energy efficiency of 421.53 TOPS/W and compute efficiency of 360 GOPS/mm2 (normalized to binary operation) at 100MHz.
具有子阵列间脉宽调制的40nm模拟输入无adc内存中计算RRAM宏
本文提出了一种无adc的内存计算(CIM)基于rram的宏,利用了完全模拟的阵列内/阵列间计算。主要贡献包括:1)基于脉宽调制(PWM)的轻量级输入编码方案,使计算吞吐量提高了约7倍;2)子阵列间的全模拟数据处理方式,无显式adc,不引入量化损耗,功耗节省11.6倍。采用台积电RRAM的40nm原型芯片在100MHz下的能量效率为421.53 TOPS/W,计算效率为360 GOPS/mm2(归一化到二进制运算)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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