Photo sensivity Hetero junction C-Si/Porous-Si/Zncds

Abstract

Nanostructure ZnCdS thin film was fabricated by electro deposition technique. To manufacture the porous-Si, p-type c-Si wafers of (100) orientation were used as a substrate. The anodization of c-Si substrate surface was carried out in Teflon chamber with Pt cathode. HF: ethanol solution were used for the porous silicon formation. The internal structure of the obtained samples was investigated via X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM). The currentvoltage characteristics of the ZnCdS/PS solar cell at dark conditions and under illumination were investigated. The capacitance for Nano-ZnCdS/PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That hetero junctions demonstrate good photo-response in the wavelength range of 510 ÷ 650 nm.