A Fully Integrated SiGe Low Noise Amplifier for 3-5GHz Ultra-WideBand Radio

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635250

Li Yang, H. Liao, Guoyan Zhang, Ru Huang, Xing Zhang

引用次数: 2

Abstract

A fully integrated low-frequency band (3.1-5 GHz) UWB LNA was designed and implemented with Jazz 0.35μm SiGe BiCMOS (peak fT60 GHz) process. The measured maximum power gain is 15.7 dB at 3.5 GHz with 0.6dB gain flatness over the whole operating bandwidth. And the minimum noise figure 3.8 dB is achieved at 4GHz. The whole circuit including the bias circuit network consumes 7mA with 3V supply and only occupies 0.65 mm x 0.9mm.

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用于3-5GHz超宽带无线电的全集成SiGe低噪声放大器

采用Jazz 0.35μm SiGe BiCMOS(峰值fT60 GHz)工艺设计并实现了全集成的低频(3.1-5 GHz)超宽带LNA。在3.5 GHz时测得的最大功率增益为15.7 dB，在整个工作带宽上的增益平坦度为0.6dB。在4GHz时达到最小噪声系数3.8 dB。包括偏置电路网络在内的整个电路在3V电源下消耗7mA，仅占地0.65 mm × 0.9mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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