Off-current characteristics of conductivity modulated TFT

Abstract

This paper reports the leakage current characteristics of Conductivity Modulated Thin Film Transistor (CMTFT) fabricated using polycrystalline silicon. The transistor uses the idea of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. Experimental on-state and off-state current-voltage characteristics of the CMTFT have been compared with those of the conventional offset drain device. The devices were fabricated using a low temperature process (620/spl deg/C) which is highly desirable for large area electronic applications.