Two-dimensional numerical simulation of short channel SOI transistors

Abstract

A two-dimensional device simulator, based on the finite-difference discretization has been developed to analyse the DC characteristics of thin-film SOI transistors. The simulation incorporate a model for avalanche generation at the drain junction, together with both bulk and surface recombination with the SOI film. The simulator has been used to model the characteristics of both p-channel and n-channel transistors fabricated on the same substrate. Accurate simulation of threshold voltage for both types of transistor has been achieved by incorporating a model for excess donor states created during oxygen implantation. The simulator has been used to investigate some of the limitations on the performance of 1- mu m transistors at high drain bias. The results are discussed briefly and qualitatively.<>