P. Chiu, G. Duesberg, U. Dettlaff-weglikowska, S. Roth
{"title":"Towards Carbon Nanotube In‐plane Transistors","authors":"P. Chiu, G. Duesberg, U. Dettlaff-weglikowska, S. Roth","doi":"10.1063/1.1514174","DOIUrl":null,"url":null,"abstract":"Intermolecular carbon nanotube junctions were formed by coupling chemically functionalized nanotubes with molecular linkers. A T‐shape heterojunction can be formed by reacting chloride terminated nanotubes with aliphatic diamine. Electronic devices were prepared by adsorption of functionalized nanotube junctions on Si/SiO2 substrate followed by standard e‐beam lithography. The charge transport through the junction was fund to be strongly modified by the in‐plane nanotube mechanically, leading to pronounced metal‐insulator transition.","PeriodicalId":196292,"journal":{"name":"Structural and Electronic Properties of Molecular Nanostructures. XVI International Winterschool on Electronic Properties of Novel Materials","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Structural and Electronic Properties of Molecular Nanostructures. XVI International Winterschool on Electronic Properties of Novel Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.1514174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Intermolecular carbon nanotube junctions were formed by coupling chemically functionalized nanotubes with molecular linkers. A T‐shape heterojunction can be formed by reacting chloride terminated nanotubes with aliphatic diamine. Electronic devices were prepared by adsorption of functionalized nanotube junctions on Si/SiO2 substrate followed by standard e‐beam lithography. The charge transport through the junction was fund to be strongly modified by the in‐plane nanotube mechanically, leading to pronounced metal‐insulator transition.