{"title":"Two-way vector modulator SiGe MMIC for millimeter-wave phased array applications","authors":"M. Kantanen, J. Holmberg, T. Karttaavi","doi":"10.1109/GSMM.2015.7175458","DOIUrl":null,"url":null,"abstract":"This paper presents a two-way vector modulator integrated circuit aimed for millimeter wave phased array systems. The active vector modulator is based on the Cartesian topology. Phase can be tuned continuously 360 degrees and the usable gain control range is more than 10 dB. The chip includes a low-noise preamplifier and a buffer amplifier in both receive and transmit paths, which are coupled together using a T-junction. The chip can be used from 60 to 80 GHz and the maximum gain is 30 dB at 67 GHz and The chip is processed in 0.35μm silicon germanium technology. Size of the chip including the pads is 2.5 × 1 mm2 from which one vector modulator core occupies 0.3 × 0.3 mm2.","PeriodicalId":405509,"journal":{"name":"Global Symposium on Millimeter-Waves (GSMM)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Global Symposium on Millimeter-Waves (GSMM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2015.7175458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a two-way vector modulator integrated circuit aimed for millimeter wave phased array systems. The active vector modulator is based on the Cartesian topology. Phase can be tuned continuously 360 degrees and the usable gain control range is more than 10 dB. The chip includes a low-noise preamplifier and a buffer amplifier in both receive and transmit paths, which are coupled together using a T-junction. The chip can be used from 60 to 80 GHz and the maximum gain is 30 dB at 67 GHz and The chip is processed in 0.35μm silicon germanium technology. Size of the chip including the pads is 2.5 × 1 mm2 from which one vector modulator core occupies 0.3 × 0.3 mm2.