Determination of LED equivalent circuits using network analyser measurements

W. Cheung, P. Edwards, G. N. French
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引用次数: 9

Abstract

We performed measurements on a number of pre-production DH LEDs biased from 1 to 10 mA and, for each case, we obtained a broad-band input impedance plot which gives both magnitude and phase as a function of frequency. We deduced from these plots the carrier lifetime, differential diode resistance, diffusion capacitance, parasitic resistance, and the ideality factor of each diode. The parameters were then used in the equivalent circuit to calculate the modelled input impedance of the device which was then compared with the measured result. There is good agreement over a wide frequency range, at least up to the frequency equal to 1/(carrier lifetime). The existence of a maximum phase lag previously noticed in single-port laser measurements is fully accounted for in our model.
使用网络分析仪测量LED等效电路的测定
我们对一些预生产DH led进行了测量,偏差从1到10 mA,对于每种情况,我们获得了一个宽带输入阻抗图,其中给出了幅度和相位作为频率的函数。我们从这些图中推导出了载流子寿命、差分二极管电阻、扩散电容、寄生电阻和每个二极管的理想因数。然后在等效电路中使用这些参数来计算器件的建模输入阻抗,然后将其与测量结果进行比较。在很宽的频率范围内,至少在等于1/(载波寿命)的频率范围内,有很好的一致性。在我们的模型中充分考虑了以前在单口激光测量中注意到的最大相位滞后的存在。
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