Development of 1-MΩ quantum Hall array resistance standards

Abstract

We have started to develop 1-MΩ quantum Hall array standards with GaAs/AlGaAs substrates. This 1-MΩ QHR array device consists of 88 Hall bars, and the nominal value is 1 MΩ × (1-0.0342 μΩ/Ω). The ratio for this nominal, 10150/131, was derived by the continued fraction expansion method. It adopts the triple-connection technique to avoid the influence of contact resistance and wiring resistance on the quantized resistance value. We expect that this device will allow us to improve the high-resistance standard system and to convert the small current from electron pumps to easily measurable voltage without lowering precision.