Electronic properties of MoS2 nanoribbon with strain using tight binding method

Abstract

The tight binding method was used to calculated the band diagrams of monolayer MoS2 and its nanoribbon structures. Both the quantum confinement effect and the strain effect have been studied. We applied tensile strains on both confined and transport directions of the nanoribbon and investigated the impacts on the band gap and the effective mass. We found that the band gap and the effective mass decrease with an increasing strain. In addition, the tensile strain along the transport direction has better effect on reducing the valence band effective mass. Although the valence band edge changes from K valley to the heavier Γ valley, applying a proper strain can still improve the transport properties.