Dual-gate FETs for ultra-high efficiency HPA

1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI:10.1109/DRC.1995.496238

T. Tanimoto, S. Tanaka, I. Ohbu, H. Matsumoto, T. Nakamura

引用次数: 4

Abstract

Dual-gate FETs with higher output impedance have been developed for ultra-high efficiency mobile communication high power amplifiers (HPAs). These FETs have a large linear gain (22 dB) and maximum power-added efficiency (PAE) of 78%, almost twice that of single-gate FETs. They operate with a 3-V supply voltage at 1.9 GHz.

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用于超高效率HPA的双栅极场效应管

具有更高输出阻抗的双栅极场效应管已被开发用于超高效率的移动通信高功率放大器。这些fet具有较大的线性增益(22 dB)和78%的最大功率附加效率(PAE)，几乎是单栅极fet的两倍。它们在1.9 GHz的3 v电源电压下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 53rd Annual Device Research Conference Digest

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