A Compact Device Model for SiC MOSFETs Valid for Wide-Temperature Range

Abstract

A compact model for SiC MOSFETs valid for wide temperature range is proposed. The model equations that represent temperature dependence of five model parameters are determined according to device physics. Unlike existing models, carrier mobility increases with temperature in the proposed model due to the discharge of the interface trap. The proposed model accurately expresses the measured I-V characteristics of commercial SiC MOSFETs over 300° C.