Role of the extensions in Double-Gate Junctionless MOSFETs in the drain current at high gate voltage

A. Cerdeira, F. Avila Herrera, B. Cardoso Paz, M. Estrada, M. Pavanello
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引用次数: 2

Abstract

This work studies the effect of doping level applied to the extensions on the electrical characteristics of short channel double gate junctionless transistor. Structures with homogeneous doping profile between source and drain contacts and structures with additional doping in the extensions are studied. 2D simulations were performed for structures with doping concentration of 5×1018 and 1019 cm-3, silicon layer thickness of 10 and 15 nm and with/without extensions of 30 nm. Above flat band voltage, the drain current in saturation presents an important decrease for homogeneously doped structures with extensions attributed to the reduction of potentials at high gate voltage. Lower short channel effects, as less threshold voltage roll off and less subthreshold slope take place in this type of structures due to the shift of minimum potential in the extension regions.
双栅无结mosfet扩展在高栅极电压下漏极电流中的作用
本文研究了掺杂水平对短沟道双栅无结晶体管电特性的影响。研究了源极与漏极之间均质掺杂结构和外延处附加掺杂结构。对掺杂浓度分别为5×1018和1019 cm-3、硅层厚度分别为10和15 nm、延伸长度分别为30 nm的结构进行了二维模拟。在平带电压以上,均匀掺杂结构的饱和漏极电流显著减小,其扩展归因于高栅电压下电位的降低。短通道效应较低,因为在这种类型的结构中,由于扩展区域中最小电位的移动,阈值电压滚降较小,亚阈值斜率较小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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