A 50 Gb/s Linear Driver in 0.13 μm SiGe BICMOS Technology for Mach-Zehnder Modulators

Fangyuan Ren, Dezhi Xing, Shuai Tang, Jun Huang, Yao Wang
{"title":"A 50 Gb/s Linear Driver in 0.13 μm SiGe BICMOS Technology for Mach-Zehnder Modulators","authors":"Fangyuan Ren, Dezhi Xing, Shuai Tang, Jun Huang, Yao Wang","doi":"10.1109/ICCS51219.2020.9336615","DOIUrl":null,"url":null,"abstract":"In this paper, a linear driver for travelling wave electrode (TWE) Mach-Zehnder Modulators (MZM) in 0.13 μm SiGe BICMOS technology is presented. The driver is implemented by a six-stage distributed differential amplifier. To drive a specified MZM with 33 Ω impedance, the driver delivers a differential output signal of 3 Vpp, exhibits a small-signal gain of 13 dB and 3-dB bandwidth of over 40 GHz. The driver works from a 6 V supply with a power consumption equal to 720 mW. Post layout simulation results show good eye diagrams of 50 Gbps NRZ and 50 GBps PAM-4 (100 Gbps) signals. The physical layout occupies an area of 1.82 × 0.71 mm2.","PeriodicalId":193552,"journal":{"name":"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS51219.2020.9336615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this paper, a linear driver for travelling wave electrode (TWE) Mach-Zehnder Modulators (MZM) in 0.13 μm SiGe BICMOS technology is presented. The driver is implemented by a six-stage distributed differential amplifier. To drive a specified MZM with 33 Ω impedance, the driver delivers a differential output signal of 3 Vpp, exhibits a small-signal gain of 13 dB and 3-dB bandwidth of over 40 GHz. The driver works from a 6 V supply with a power consumption equal to 720 mW. Post layout simulation results show good eye diagrams of 50 Gbps NRZ and 50 GBps PAM-4 (100 Gbps) signals. The physical layout occupies an area of 1.82 × 0.71 mm2.
用于马赫-曾德调制器的0.13 μm SiGe BICMOS技术50gb /s线性驱动器
本文提出了一种0.13 μm SiGe BICMOS技术行波电极(TWE)马赫-曾德调制器(MZM)的线性驱动器。驱动器由一个6级分布式差分放大器实现。为了驱动具有33 Ω阻抗的指定MZM,驱动器提供3 Vpp的差分输出信号,显示13 dB的小信号增益和超过40 GHz的3 dB带宽。该驱动器使用6v电源,功耗为720 mW。后布局仿真结果显示了50gbps NRZ和50gbps PAM-4 (100gbps)信号的良好眼图。物理布局面积为1.82 × 0.71 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信