Triple-junction colour sensor fully compatible with CMOS technology: results of a test chip

Abstract

We show that a triple-junction photosensor can been obtained within a CMOS n-well technology with no additional process steps but a simple layout modification of the p-channel-stop mask. Results from the electrooptical characterisation of a specially designed test chip proved that the wavelength selectivity of the sensor can be used for colour detection and confirmed the device full compatibility with CMOS technology.