A 12mW 5GHz wideband low-noise amplifier in 0.13µm CMOS using noise cancellation

H. Kim, Jiyoung Tak, Jinju Lee, Jihye Shin, Jung-Won Han, Sung Min Park
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引用次数: 1

Abstract

This paper presents a wideband low-noise amplifier (LNA) exploiting noise cancellation technique, which operates at 800MHz–5.7GHz for low-power multi-standard applications. Implemented in a 0.13µm CMOS technology, the measured results of the LNA demonstrate the maximum gain of 11.7dB in the frequency range of 811MHz∼5.7GHz, the noise figure of 2.58∼5.11dB within the bandwidth, the input-referred third order intercept point (IIP3) of 1.6dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×0.9mm2.
采用噪声消除技术的0.13µm CMOS 12mW 5GHz宽带低噪声放大器
本文提出了一种基于噪声消除技术的宽带低噪声放大器(LNA),工作频率为800MHz-5.7GHz,适用于低功耗多标准应用。LNA采用0.13µm CMOS技术实现,测量结果表明,在811MHz ~ 5.7GHz频率范围内,最大增益为11.7dB,带宽范围内噪声系数为2.58 ~ 5.11dB, 2.4GHz时输入参考三阶截距点(IIP3)为1.6dBm,单路1.2V电源功耗为12mW。芯片的总面积为0.7×0.9mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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