{"title":"A new characterization technique for extracting parasitic inductances of fast switching power MOSFETs using two-port vector network analyzer","authors":"Tianjiao Liu, Runtao Ning, T.T.Y. Wong, Z. Shen","doi":"10.23919/ISPSD.2017.7988967","DOIUrl":null,"url":null,"abstract":"This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement using two-port vector network analyzer. The method is validated through case studies of 1200V SiC MOSFET in TO-247 and 30V silicon trench MOSFET in SO-8 package.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement using two-port vector network analyzer. The method is validated through case studies of 1200V SiC MOSFET in TO-247 and 30V silicon trench MOSFET in SO-8 package.