Analysis of the cavity geometric effect of liquid-phase epitaxy process

F. Chao, Way-Seen Wang
{"title":"Analysis of the cavity geometric effect of liquid-phase epitaxy process","authors":"F. Chao, Way-Seen Wang","doi":"10.1109/IEMT.1993.398215","DOIUrl":null,"url":null,"abstract":"The slider-induced convection of the confined melt cavity in liquid phase epitaxy is calculated by the finite element method. The steady state flux distribution within the melt cavity is analyzed, and the relative momentum transfer on the poly-GaAs melt is calculated for several kinds of cavity height and shape. It is found that the amount of momentum tranfer is related to the cavity height and the skew angle of the cavity, which could change initial growth rate in thin layer device manufacturing.<<ETX>>","PeriodicalId":206206,"journal":{"name":"Proceedings of 15th IEEE/CHMT International Electronic Manufacturing Technology Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 15th IEEE/CHMT International Electronic Manufacturing Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.1993.398215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The slider-induced convection of the confined melt cavity in liquid phase epitaxy is calculated by the finite element method. The steady state flux distribution within the melt cavity is analyzed, and the relative momentum transfer on the poly-GaAs melt is calculated for several kinds of cavity height and shape. It is found that the amount of momentum tranfer is related to the cavity height and the skew angle of the cavity, which could change initial growth rate in thin layer device manufacturing.<>
液相外延工艺的腔几何效应分析
用有限元法计算了液相外延中受限熔体腔的滑块诱导对流。分析了熔体腔内的稳态磁通分布,计算了不同腔高和形状下聚砷化镓熔体上的相对动量传递。研究发现,动量传递量与空腔高度和空腔倾斜角度有关,可以改变薄层器件制造过程中的初始生长速率。
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