Electrical Resistivity of Partially Transformed Silicon Carbide Made from Coal

M. Tangstad, Haley Hoover, G. Sævarsdóttir
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Abstract

The bulk resistivity of coal that has been partially transformed to silicon carbide (SiC) over the temperature range 25-1600°C was investigated with an emphasis on temperature, SiC content, bulk density, and presence of elemental silicon. The materials were 0%SiC (wt%), 30%SiC, 69%SiC, and 72%SiC. Only the 72%SiC sample contained elemental silicon in substantial amounts. At low temperatures, there is high variation among all the materials, but at high temperatures the differences are less severe, as the results are all the same magnitude. The difference of the materials with the highest and lowest resistivity was around 30 mΩm between the 30%SiC and the 69%SiC at 1500°C. The mechanical strength of the material is lowered upon conversion to SiC but is raised once elemental silicon begins to form. In addition to temperature, the resistivity seems to respond to SiC content, bulk density, and the presence of silicon. An increase in bulk density consistently leads to a decrease in the resistivity, except with the presence of silicon. SiC content may have some effect, but it is lesser compared to the other factors examined so far.
煤质部分转化碳化硅的电阻率
研究了部分转化为碳化硅(SiC)的煤在25-1600℃温度范围内的体积电阻率,重点研究了温度、SiC含量、体积密度和单质硅的存在。材料分别为0%SiC (wt%)、30%SiC、69%SiC和72%SiC。只有72%的sic样品含有大量的单质硅。在低温下,所有材料之间的差异很大,但在高温下,差异不那么严重,因为结果都是相同的量级。在1500℃时,30%SiC和69%SiC材料的电阻率最高和最低的差异在30 mΩm左右。材料的机械强度在转化为碳化硅时降低,但在单质硅开始形成时提高。除温度外,电阻率似乎与SiC含量、堆积密度和硅的存在有关。除了硅的存在外,堆积密度的增加总是导致电阻率的降低。SiC含量可能有一些影响,但与迄今为止研究的其他因素相比,影响较小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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