Enhancing the Efficiency of Thin-Film Heterojunction Solar Cells with CIGS using Alternative Metal Chalcogenide Buffer Layers: SCAPS-1D Simulation software

Abstract

In the majority of cutting-edge Copper Indium Gallium Diselenide (CIGS) photovoltaic cells, Cadmium Sulfide (CdS) is employed as the buffer layer. However, due to the hazardous properties associated with CdS, it is imperative to investigate alternative materials that can offer safety next to both environmental and economic benefits. To facilitate this investigation, the SCAPS-ID computational modeling software has been utilized to analyze pertinent data. A plethora of comprehensive studies have been conducted to ascertain whether other eco-friendly and cost-effective materials, such as Zinc Selenide (ZnSe), Zinc Sulfide (ZnS), Cadmium Selenide (CdSe), and Indium Sulfide (In283), could effectively replace the CdS (buffer) layer in CIGS solar cells. The findings indicate that when CdS and ZnSe are implemented as buffer layers, the photovoltaic cells exhibit superior performance efficiency metrics. The SCAPS-ID simulations demonstrate that optimal p-njunction device efficiency parameters are achieved when the CIGS (absorber) layer thickness spans between 1200 and 1500 nm, the ZnSe (buffer) layer thickness varies from 20 to 60 nm, and the thickness of the Aluminum-doped Zinc Oxide (ZnO:Al) (window) layer measures 25 nm.