Highly manufacturable sub-100 nm DRAM integrated with full functionality

Abstract

Sub-100 nm DRAM is successfully fabricated for the first time with several key technologies, including W/W/sub x/N-poly gate, bitline structure having low parasitic capacitance, Ru/Ta/sub 2/O/sub 5//poly-Si capacitor and advanced CVD-Al contact processes. A fully functional working device is obtained with promising cell performance. Each technology also shows its extendibility as a manufacturable module process for further scaled DRAM.