High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 /spl Aring/

Abstract

High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ are fabricated with EOT of 4.8 and 9.6 /spl Aring/, leakage current of 0.06 and 0.4 A/cm/sup -2/ and D/sub it/ of both 3/spl times/10/sup 10/ eV/sup -1//cm/sup 2/, respectively. The high K is further evidenced from high MOSFET's I/sub d/ and g/sub m/ with low I/sub OFF/. Good SILC and Q/sub BD/ are obtained and comparable with SiO/sub 2/. The low EOT is due to the high thermodynamic stability in contact with Si and stable after H/sub 2/ annealing up to 550/spl deg/C.