Accounting for Current Degradation Effects in the Compact Noise Modeling of Nano-scale MOSFETs

Abstract

This work presents a compact modeling approach and Verilog-A implementation method for flicker noise in MOSFETs, accounting for current degradation effects such as field-dependent mobility attenuation and access resistance. After arguing on the importance of such effects for noise level assessment, a Lambert-W based drain current model is utilized as an example to showcase the degradation-aware compact noise modeling. For the access resistance effects, measurements from nano-scale MOSFETs are utilized for experimental demonstration. Moreover, adapted methods for proper calculation of transconductance (intrinsic and extrinsic) as well as noise source positioning are also presented, revealing their significance for the correct model implementation.